Research Assistant
Ph.D. candidate
Advisor: Prof. J. Judy
Department of Electrical and Computer Engineering
University of Minnesota
Minneapolis, MN 55455, USA
phone: (612) 626-1591
E-Mail: sbae@ece.umn.edu
Member of the
Center for Micromagnetics and Information Technologies (MINT)
I was born in Seoul, Korea in 1968. Currently, I am pursuing the Ph.D in electrical and computer engineering department at University of Minnesota. Before joining the Center for Micromagnetics and Information Technologies (MINT) at university of Minnesota, I worked as a research scientist at Korea Institute of Science Technology (KIST), where I have researched on the GMR spin-valve, metallized film capacitor, and electromigration of Al-1%Si and Cu interconnections used for VLSI Technology. My current research interests include magnetic thin films (its characterization), exchange biased bilayers, GMR spin valve head, GMR spin valve MRAM and transistor, electrical reliability of GMR magnetic recording head (including electromigration and thermomigration), and magnetic thin film thermo-couple apllications.
On Sep., 2000, I won the "Distinguished Paper Award" and "Young Researcher award" from the international conference on ferrite 8, which was held at Kyoto, Japan. I am currently student member of IEEE and American Physics Society (APS).
Publications
1. S. Bae et.al., "A study on the magnetic properties in NiFeCo/Cu/NiFeCo/FeMn multilayered thin films for magnetoresistive head", J. Kor. Vac. Soc., No. 1, 67 (1995)
2. S. Bae et.al., "Magnetoresistance of NiFeCo/Cu/NiFeCo/FeMn multilayered thin films with low saturation field", ISPMM No. 2, 385 (1995)
3. S. Bae et. al., "Analysis of giant magnetoresistance behaviour of NiFeCo/Cu/NiFeCo/FeMn spin valves", J. Kor. Mag. Soc., No. 2, 112 (1996)
4. S. Bae et.al., "A study on the electromigration phenomena in dielectric passivated Al-1%Si thin film interconnection under D.C. and pulsed D.C. conditions", J. Kor. Vac. Soc., No. 5, 229 (1996)
5. S. Bae, "Semiconductor process and MOS circuit design", Electronic Science, Seoul, Korea, (1991 ~ 1993)
6. S. Bae et. al., "Dependence of exchange coupling on the surface roughness and structure in a-Fe2O3/NiFe and NiFe/a-Fe2O3 bilayers", J. Appl. Phys., No. 87, 6650 (2000)
7. S. Bae et. al., "Bottom giant magnetoresistance spin valves using a radio frequency reactive bias-sputtered a-Fe2O3 antiferromagnetic layer", J. Appl. Phys., No. 87, 6980 (2000)
8. S. Bae et. al., "Effects of initial layer surface roughness on GMR performance of Si/Cu/NiFe/Cu/Co/Cu/NiFe dual spin-valves for MRAM", accepted in IEEE Trans. Magn., Sep. (2000)
9. S. Bae et. al., " Effects of pumping time on GMR and coercivity of RF-sputtered MRAM dual spin-valves", accepted in IEEE Trans. Magn., Sep. (2000)
10. S. Bae et. al., "Effects of deposition process parameters on exchange coupling of a-Fe2O3/NiFe bilayers and GMR of a-Fe2O3/NiFe/Cu/NiFe spin-valves", accepted in IEEE Trans. Magn., Sep. (2000)
11. S. Bae et. al., "Structural and microscopic analyses of a-Fe2O3/Co(NiFe)/Cu/Co(NiFe) bottom GMR spin-valves", accepted in IEEE Trans. Magn., Sep. (2000)
12. S. Bae et. al., "Effects of grain cluster size on coercivity and giant magnetoresistance of NiFe/Cu/CoFe/Cu/NiFe pseudo spin valves", Appl. Phys. Lett., No. 77, 3435 (2000)
13. S. Bae et. al., "Application of a-Fe2O3 bottom GMR spin-valve for magnetoresistive random access memory (MRAM)", accepted in Jpn. Metl. of Soc., Feb. (2001)
14. S. Bae et. al., "Fabrication and thermal-chemical stability of magnetoresistive random access memory (MRAM) cells using a-Fe2O3 bottom GMR spin-valves", accepted in IEEE Trans. Magn., (2001)
15. S. Bae et. al., "Magnetoelectronic devices using a-Fe2O3 bottom GMR spin-valves", accepted in IEEE Trans. Magn., July (2001)
16. S. Bae et. al., "Electromigration-induced failure analyses of single layered NiFe thin films for magnetoresistive read head", submitted to J. Appl. Phys., (2001)
17. S. Bae et. al., "Giant magnetoresistive (GMR) spin-valve transpinnor", submitted to IEEE Trans. Magn., (2001)
18. S. Bae et. al., "High thermal stability of exchange biased bilayers and bottom giant magnetoresistive spin-valve using a-Fe2O3 antiferromagnetic layer", submitted to Appl. Phys. Lett., (2001)